Journal: Materials

Article Title: Effect of Heating/Cooling Rate and Temperature on Microstructure and Electrical Properties of Sputter-Deposited PZT Thin Films Crystallized by Conventional Furnace Annealing

doi: 10.3390/ma19091782

Figure Lengend Snippet: Patterned sample fabrication process. ( a ) Deposition of SiO 2 via reactive RF magnetron sputtering; ( b ) Deposition of the Ti/Pt bottom electrode via DC magnetron sputtering and patterning via lift-off with subsequent thermal stabilization by CFA; ( c ) Deposition of PZT via RF magnetron sputtering and patterning via lift-off with subsequent crystallization by CFA; ( d ) Deposition of the Ti/Pt top electrode via DC magnetron sputtering and patterning via lift-off; ( e ) Microscopic image of a final fabricated sample.

Article Snippet: SEM (XL40, Philips Electron Optics, Hillsboro, OR, USA) was used to examine the surface morphology of the Ti/Pt bottom electrode and the PZT film, while the PZT was platinized for imaging.

Techniques: Crystallization Assay

Journal: Materials

Article Title: Effect of Heating/Cooling Rate and Temperature on Microstructure and Electrical Properties of Sputter-Deposited PZT Thin Films Crystallized by Conventional Furnace Annealing

doi: 10.3390/ma19091782

Figure Lengend Snippet: Microscopic images of a Si/SiO 2 /Ti/Pt/PZT stack after CFA-treatment at 600 °C for 30 min with a heating/cooling rate of 3 °C·min −1 , where the Ti/Pt bottom electrode was not subjected to a separate thermal stabilization step prior to the deposition of the PZT layer, showing delamination ( a ) and hillock formation ( b ) in the PZT layer.

Article Snippet: SEM (XL40, Philips Electron Optics, Hillsboro, OR, USA) was used to examine the surface morphology of the Ti/Pt bottom electrode and the PZT film, while the PZT was platinized for imaging.

Techniques:

Journal: Materials

Article Title: Effect of Heating/Cooling Rate and Temperature on Microstructure and Electrical Properties of Sputter-Deposited PZT Thin Films Crystallized by Conventional Furnace Annealing

doi: 10.3390/ma19091782

Figure Lengend Snippet: Microscopic images of the Si/SiO 2 /Ti/Pt/PZT stacks following CFA-treatment of the PZT layer prior to deposition of the top electrode for all patterned samples. Sample identifiers denote the annealing peak temperature and heating/cooling rate (e.g., S P _650_3: 650 °C, 3 °C·min −1 ). The diameter of the patterned PZT thin film of all depicted samples is 600 µm.

Article Snippet: SEM (XL40, Philips Electron Optics, Hillsboro, OR, USA) was used to examine the surface morphology of the Ti/Pt bottom electrode and the PZT film, while the PZT was platinized for imaging.

Techniques:

Journal: Materials

Article Title: Effect of Heating/Cooling Rate and Temperature on Microstructure and Electrical Properties of Sputter-Deposited PZT Thin Films Crystallized by Conventional Furnace Annealing

doi: 10.3390/ma19091782

Figure Lengend Snippet: XRD patterns of Si/SiO 2 /Ti/Pt/PZT stacks with the PZT layer in the as-deposited state and after CFA-treatment at six different temperatures between 450 °C and 700 °C for 30 min with a heating/cooling rate of 3 °C·min −1 . The Ti/Pt bottom electrode was thermally stabilized prior to PZT deposition.

Article Snippet: SEM (XL40, Philips Electron Optics, Hillsboro, OR, USA) was used to examine the surface morphology of the Ti/Pt bottom electrode and the PZT film, while the PZT was platinized for imaging.

Techniques: